Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
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منابع مشابه
ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
An effective passivation technique for AlGaN/GaN HEMTs is presented. This technique features ultrathin AlN film grown by atomic layer deposition (ALD). With in-situ remote plasma pretreatment prior to the AlN deposition, atomic sharp interface between ALD-AlN and III-nitride can be obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD...
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تاریخ انتشار 2015